IndiumV3, Chine, Analysis, bibRecord, 000156

Phase Separation Induced by Au Catalysts in Ternary InGaAs Nanowires

Identifieur interne : 000156 ( Chine/Analysis ); précédent : 000155; suivant : 000157

Phase Separation Induced by Au Catalysts in Ternary InGaAs Nanowires

Auteurs : RBID : Pascal:13-0158703

Descripteurs français

Pascal (Inist)
- Séparation phase, Catalyseur, Nanofil, Nanomatériau, Mécanisme croissance, Méthode MOCVD, Structure coeur couche, Microscopie électronique transmission, Précurseur, Composé III-V, Semiconducteur III-V, Méthode fonctionnelle densité, Alliage(action), Or, Arséniure d'indium, Arséniure de gallium, InGaAs, InxGa1-xAs, GaAs, 8116H, 8107V, 8107B, 7115M, Structure coeur coque.
Wicri :
- concept : Or.

English descriptors

KwdEn :
- Alloying, Catalysts, Core shell structure, Density functional method, Gallium arsenides, Gold, Growth mechanism, III-V compound, III-V semiconductors, Indium arsenides, MOCVD, Nanostructured materials, Nanowires, Phase separation, Precursor, Transmission electron microscopy.

Abstract

We report a novel phase separation phenomenon observed in the growth of ternary In_xGa_1-xAs nanowires by metalorganic chemical vapor deposition. A spontaneous formation of core-shell nanowires is investigated by cross-sectional transmission electron microscopy, revealing the compositional complexity within the ternary nanowires. It has been found that for In_xGa_1-xAs nanowires high precursor flow rates generate ternary In_xGa_1-xAs cores with In-rich shells, while low precursor flow rates produce binary GaAs cores with ternary In_xGa_1-xAs shells. First-principle calculations combined with thermodynamic considerations suggest that this phenomenon is due to competitive alloying of different group-III elements with Au catalysts, and variations in elemental concentrations of group-III materials in the catalyst under different precursor flow rates. This study shows that precursor flow rates are critical factors for manipulating Au catalysts to produce nanowires of desired composition.

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Pascal:13-0158703

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Phase Separation Induced by Au Catalysts in Ternary InGaAs Nanowires</title>
<author><name sortKey="Guo, Ya Nan" uniqKey="Guo Y">Ya-Nan Guo</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Materials Engineering, The University of Queensland</s1>
<s2>Brisbane, QLD 4072</s2>
<s3>AUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>13 aut.</sZ>
</inist:fA14>
<country>Australie</country>
<wicri:noRegion>Brisbane, QLD 4072</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Xu, Hong Yi" uniqKey="Xu H">Hong-Yi Xu</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Materials Engineering, The University of Queensland</s1>
<s2>Brisbane, QLD 4072</s2>
<s3>AUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>13 aut.</sZ>
</inist:fA14>
<country>Australie</country>
<wicri:noRegion>Brisbane, QLD 4072</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Auchterlonie, Graeme J" uniqKey="Auchterlonie G">Graeme J. Auchterlonie</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Centre for Microscopy and Microanalysis, The University of Queensland</s1>
<s2>Brisbane, QLD 4072</s2>
<s3>AUS</s3>
<sZ>3 aut.</sZ>
<sZ>13 aut.</sZ>
</inist:fA14>
<country>Australie</country>
<wicri:noRegion>Brisbane, QLD 4072</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Burgess, Tim" uniqKey="Burgess T">Tim Burgess</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University</s1>
<s2>Canberra, ACT 0200</s2>
<s3>AUS</s3>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>Australie</country>
<wicri:noRegion>Canberra, ACT 0200</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Joyce, Hannah J" uniqKey="Joyce H">Hannah J. Joyce</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University</s1>
<s2>Canberra, ACT 0200</s2>
<s3>AUS</s3>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>Australie</country>
<wicri:noRegion>Canberra, ACT 0200</wicri:noRegion>
</affiliation>
</author>
<author><name>QIANG GAO</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University</s1>
<s2>Canberra, ACT 0200</s2>
<s3>AUS</s3>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>Australie</country>
<wicri:noRegion>Canberra, ACT 0200</wicri:noRegion>
</affiliation>
</author>
<author><name>HARK HOE TAN</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University</s1>
<s2>Canberra, ACT 0200</s2>
<s3>AUS</s3>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>Australie</country>
<wicri:noRegion>Canberra, ACT 0200</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Jagadish, Chennupati" uniqKey="Jagadish C">Chennupati Jagadish</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University</s1>
<s2>Canberra, ACT 0200</s2>
<s3>AUS</s3>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>Australie</country>
<wicri:noRegion>Canberra, ACT 0200</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Shu, Hai Bo" uniqKey="Shu H">Hai-Bo Shu</name>
<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road</s1>
<s2>Shanghai 200083</s2>
<s3>CHN</s3>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
<sZ>11 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Shanghai 200083</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Chen, Xiao Shuang" uniqKey="Chen X">Xiao-Shuang Chen</name>
<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road</s1>
<s2>Shanghai 200083</s2>
<s3>CHN</s3>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
<sZ>11 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Shanghai 200083</wicri:noRegion>
</affiliation>
</author>
<author><name>WEI LU</name>
<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road</s1>
<s2>Shanghai 200083</s2>
<s3>CHN</s3>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
<sZ>11 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Shanghai 200083</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Kim, Yong" uniqKey="Kim Y">Yong Kim</name>
<affiliation wicri:level="1"><inist:fA14 i1="05"><s1>Department of Physics, Dong-A University, Hadan-2-dong</s1>
<s2>Sahagu, Busan 604-714</s2>
<s3>KOR</s3>
<sZ>12 aut.</sZ>
</inist:fA14>
<country>Corée du Sud</country>
<wicri:noRegion>Sahagu, Busan 604-714</wicri:noRegion>
</affiliation>
</author>
<author><name>JIN ZOU</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Materials Engineering, The University of Queensland</s1>
<s2>Brisbane, QLD 4072</s2>
<s3>AUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>13 aut.</sZ>
</inist:fA14>
<country>Australie</country>
<wicri:noRegion>Brisbane, QLD 4072</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Centre for Microscopy and Microanalysis, The University of Queensland</s1>
<s2>Brisbane, QLD 4072</s2>
<s3>AUS</s3>
<sZ>3 aut.</sZ>
<sZ>13 aut.</sZ>
</inist:fA14>
<country>Australie</country>
<wicri:noRegion>Brisbane, QLD 4072</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">13-0158703</idno>
<date when="2013">2013</date>
<idno type="stanalyst">PASCAL 13-0158703 INIST</idno>
<idno type="RBID">Pascal:13-0158703</idno>
<idno type="wicri:Area/Main/Corpus">000F35</idno>
<idno type="wicri:Area/Main/Repository">000747</idno>
<idno type="wicri:Area/Chine/Extraction">000156</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">1530-6984</idno>
<title level="j" type="abbreviated">Nano lett. : (Print)</title>
<title level="j" type="main">Nano letters : (Print)</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Alloying</term>
<term>Catalysts</term>
<term>Core shell structure</term>
<term>Density functional method</term>
<term>Gallium arsenides</term>
<term>Gold</term>
<term>Growth mechanism</term>
<term>III-V compound</term>
<term>III-V semiconductors</term>
<term>Indium arsenides</term>
<term>MOCVD</term>
<term>Nanostructured materials</term>
<term>Nanowires</term>
<term>Phase separation</term>
<term>Precursor</term>
<term>Transmission electron microscopy</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Séparation phase</term>
<term>Catalyseur</term>
<term>Nanofil</term>
<term>Nanomatériau</term>
<term>Mécanisme croissance</term>
<term>Méthode MOCVD</term>
<term>Structure coeur couche</term>
<term>Microscopie électronique transmission</term>
<term>Précurseur</term>
<term>Composé III-V</term>
<term>Semiconducteur III-V</term>
<term>Méthode fonctionnelle densité</term>
<term>Alliage(action)</term>
<term>Or</term>
<term>Arséniure d'indium</term>
<term>Arséniure de gallium</term>
<term>InGaAs</term>
<term>InxGa1-xAs</term>
<term>GaAs</term>
<term>8116H</term>
<term>8107V</term>
<term>8107B</term>
<term>7115M</term>
<term>Structure coeur coque</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Or</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">We report a novel phase separation phenomenon observed in the growth of ternary In<sub>x</sub>
Ga<sub>1-x</sub>
As nanowires by metalorganic chemical vapor deposition. A spontaneous formation of core-shell nanowires is investigated by cross-sectional transmission electron microscopy, revealing the compositional complexity within the ternary nanowires. It has been found that for In<sub>x</sub>
Ga<sub>1-x</sub>
As nanowires high precursor flow rates generate ternary In<sub>x</sub>
Ga<sub>1-x</sub>
As cores with In-rich shells, while low precursor flow rates produce binary GaAs cores with ternary In<sub>x</sub>
Ga<sub>1-x</sub>
As shells. First-principle calculations combined with thermodynamic considerations suggest that this phenomenon is due to competitive alloying of different group-III elements with Au catalysts, and variations in elemental concentrations of group-III materials in the catalyst under different precursor flow rates. This study shows that precursor flow rates are critical factors for manipulating Au catalysts to produce nanowires of desired composition.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1530-6984</s0>
</fA01>
<fA03 i2="1"><s0>Nano lett. : (Print)</s0>
</fA03>
<fA05><s2>13</s2>
</fA05>
<fA06><s2>2</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Phase Separation Induced by Au Catalysts in Ternary InGaAs Nanowires</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>GUO (Ya-Nan)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>XU (Hong-Yi)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>AUCHTERLONIE (Graeme J.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>BURGESS (Tim)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>JOYCE (Hannah J.)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>QIANG GAO</s1>
</fA11>
<fA11 i1="07" i2="1"><s1>HARK HOE TAN</s1>
</fA11>
<fA11 i1="08" i2="1"><s1>JAGADISH (Chennupati)</s1>
</fA11>
<fA11 i1="09" i2="1"><s1>SHU (Hai-Bo)</s1>
</fA11>
<fA11 i1="10" i2="1"><s1>CHEN (Xiao-Shuang)</s1>
</fA11>
<fA11 i1="11" i2="1"><s1>WEI LU</s1>
</fA11>
<fA11 i1="12" i2="1"><s1>KIM (Yong)</s1>
</fA11>
<fA11 i1="13" i2="1"><s1>JIN ZOU</s1>
</fA11>
<fA14 i1="01"><s1>Materials Engineering, The University of Queensland</s1>
<s2>Brisbane, QLD 4072</s2>
<s3>AUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>13 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Centre for Microscopy and Microanalysis, The University of Queensland</s1>
<s2>Brisbane, QLD 4072</s2>
<s3>AUS</s3>
<sZ>3 aut.</sZ>
<sZ>13 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University</s1>
<s2>Canberra, ACT 0200</s2>
<s3>AUS</s3>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</fA14>
<fA14 i1="04"><s1>National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road</s1>
<s2>Shanghai 200083</s2>
<s3>CHN</s3>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
<sZ>11 aut.</sZ>
</fA14>
<fA14 i1="05"><s1>Department of Physics, Dong-A University, Hadan-2-dong</s1>
<s2>Sahagu, Busan 604-714</s2>
<s3>KOR</s3>
<sZ>12 aut.</sZ>
</fA14>
<fA20><s1>643-650</s1>
</fA20>
<fA21><s1>2013</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>27369</s2>
<s5>354000173267790530</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2013 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>42 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>13-0158703</s0>
</fA47>
<fA60><s1>P</s1>
<s3>CR</s3>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Nano letters : (Print)</s0>
</fA64>
<fA66 i1="01"><s0>USA</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>We report a novel phase separation phenomenon observed in the growth of ternary In<sub>x</sub>
Ga<sub>1-x</sub>
As nanowires by metalorganic chemical vapor deposition. A spontaneous formation of core-shell nanowires is investigated by cross-sectional transmission electron microscopy, revealing the compositional complexity within the ternary nanowires. It has been found that for In<sub>x</sub>
Ga<sub>1-x</sub>
As nanowires high precursor flow rates generate ternary In<sub>x</sub>
Ga<sub>1-x</sub>
As cores with In-rich shells, while low precursor flow rates produce binary GaAs cores with ternary In<sub>x</sub>
Ga<sub>1-x</sub>
As shells. First-principle calculations combined with thermodynamic considerations suggest that this phenomenon is due to competitive alloying of different group-III elements with Au catalysts, and variations in elemental concentrations of group-III materials in the catalyst under different precursor flow rates. This study shows that precursor flow rates are critical factors for manipulating Au catalysts to produce nanowires of desired composition.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B80A16H</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B80A07V</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B80A07B</s0>
</fC02>
<fC02 i1="04" i2="3"><s0>001B70A15</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Séparation phase</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Phase separation</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Catalyseur</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Catalysts</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Nanofil</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Nanowires</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Nanomatériau</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Nanostructured materials</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Mécanisme croissance</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Growth mechanism</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Mecanismo crecimiento</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Méthode MOCVD</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>MOCVD</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Structure coeur couche</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Core shell structure</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Microscopie électronique transmission</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Transmission electron microscopy</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Précurseur</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Precursor</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Composé III-V</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>III-V compound</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Compuesto III-V</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>III-V semiconductors</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Méthode fonctionnelle densité</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Density functional method</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Alliage(action)</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Alloying</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Or</s0>
<s2>NC</s2>
<s5>15</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Gold</s0>
<s2>NC</s2>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Arséniure d'indium</s0>
<s2>NK</s2>
<s5>16</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Indium arsenides</s0>
<s2>NK</s2>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Arséniure de gallium</s0>
<s2>NK</s2>
<s5>17</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s2>NK</s2>
<s5>17</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>InGaAs</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>InxGa1-xAs</s0>
<s4>INC</s4>
<s5>47</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>GaAs</s0>
<s4>INC</s4>
<s5>48</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>8116H</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>8107V</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>8107B</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>7115M</s0>
<s4>INC</s4>
<s5>74</s5>
</fC03>
<fC03 i1="24" i2="3" l="FRE"><s0>Structure coeur coque</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fC03 i1="24" i2="3" l="ENG"><s0>Core shell structure</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fC03 i1="24" i2="3" l="SPA"><s0>Estructura núcleo cascarón</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fN21><s1>140</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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   |texte=   Phase Separation Induced by Au Catalysts in Ternary InGaAs Nanowires
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Phase Separation Induced by Au Catalysts in Ternary InGaAs Nanowires

Phase Separation Induced by Au Catalysts in Ternary InGaAs Nanowires

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